NT5CC256M16ER-EK

The Nanya Technology NT5CC256M16ER-EK is a high-density DDR3L SDRAM component designed to meet the memory requirements of modern computing and embedded applications. With a density of 4 gigabits and an x16 data bus organization, this device provides a balanced combination of capacity and bandwidth for systems requiring efficient memory performance.

Key Features

• DDR3L SDRAM architecture with 8n-bit prefetch and burst lengths of 8 and 4 (via burst chop)
• Operating voltage of 1.35V (range 1.283V to 1.45V), reducing power consumption compared to standard DDR3
• 96-ball FBGA package for space-constrained PCB designs
• Data transfer rates up to to be verified (speed grade not specified in public datasheet)
• On-die termination (ODT) and programmable CAS latency for signal integrity
• Auto refresh and self refresh modes for low-power standby
• Industrial temperature range (0°C to +95°C case temperature) for reliable operation in varied environments
• RoHS-compliant lead-free packaging

Applications

• Embedded systems (e.g., networking, industrial computing)
• Consumer electronics (e.g., set-top boxes, smart TVs)
• Computing peripherals (e.g., SSDs, network adapters)
• Automotive infotainment (if qualified, verify with manufacturer)

Selection Guidance

When integrating the NT5CC256M16ER-EK, designers should verify the speed grade (e.g., -EK suffix indicates specific timing parameters) and ensure compatibility with the memory controller. The 1.35V operation is ideal for power-sensitive designs, but the system must support DDR3L signaling levels. For detailed timing and AC/DC characteristics, refer to the official Nanya datasheet.